{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698216","patent":{"patent_number":"US-9698216","title":"Semiconductor device having a breakdown voltage holding region","assignee":null,"inventors":[],"filing_date":"2016-07-20T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having a breakdown voltage holding region","description":"A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first condu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698216","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698216","citation_suggestion":"Patentable. \"Semiconductor device having a breakdown voltage holding region\" (US-9698216). https://patentable.app/patents/US-9698216","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698216","json":"https://patentable.app/api/llm-context/US-9698216","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:20.423Z"}