{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698218","patent":{"patent_number":"US-9698218","title":"Method for forming semiconductor structure","assignee":null,"inventors":[],"filing_date":"2016-07-28T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["B82Y","B82Y","B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"The present invention provides some methods for forming at least two different nanowire structures with different diameters on one substrate. Since the diameter of the nanowire structure will influence the threshold voltage (Vt) and the drive currents of a nanowire field effect transistor, in this invention, at least two nanowire structures with different diameters can be formed on one substrate. Therefore, in the following steps, these nanowire structures can be applied in different nanowire field effect transistors with different Vt and drive currents. This way, the flexibility of the nanowire field effect transistors can be improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor structure","description":"The present invention provides some methods for forming at least two different nanowire structures with different diameters on one substrate. Since the diameter of the nanowire structure will influenc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698218","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698218","citation_suggestion":"Patentable. \"Method for forming semiconductor structure\" (US-9698218). https://patentable.app/patents/US-9698218","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698218","json":"https://patentable.app/api/llm-context/US-9698218","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:29.536Z"}