{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698241","patent":{"patent_number":"US-9698241","title":"Integrated circuits with replacement metal gates and methods for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-03-16T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"Integrated circuits and methods for fabricating integrated circuits are provided. In one embodiment, a method for fabricating integrated circuits includes forming a gate dielectric overlying a substrate, and forming a base work function layer that includes tungsten overlying the gate dielectric. The base work function layer overlies the gate dielectric in a first and second region, where the first region is one of a pFET region or an nFET region and the second region is the other of the pFET region or the nFET region. A mask is formed over the first region, and then the second region is exposed. A work function value of the base work function layer in the second region is altered to produce a modified work function layer. The mask is removed from the over the first region, and a gate electrode is formed overlying the base and modified work function layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuits with replacement metal gates and methods for fabricating the same","description":"Integrated circuits and methods for fabricating integrated circuits are provided. In one embodiment, a method for fabricating integrated circuits includes forming a gate dielectric overlying a substra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698241","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698241","citation_suggestion":"Patentable. \"Integrated circuits with replacement metal gates and methods for fabricating the same\" (US-9698241). https://patentable.app/patents/US-9698241","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698241","json":"https://patentable.app/api/llm-context/US-9698241","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:29:12.680Z"}