{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698246","patent":{"patent_number":"US-9698246","title":"LDMOS device with graded body doping","assignee":null,"inventors":[],"filing_date":"2016-09-06T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A laterally diffused MOS (LDMOS) device includes a substrate having a p-epi layer thereon. A p-body region is in the p-epi layer. An ndrift (NDRIFT) region is within the p-body region providing a drain extension region, and a gate dielectric layer is formed over a channel region in the p-body region adjacent to and on respective sides of a junction with the NDRIFT region, and a patterned gate electrode on the gate dielectric. A DWELL region is within the p-body region, sidewall spacers are on sidewalls of the gate electrode, a source region is within the DWELL region, and a drain region is within the NDRIFT region. The p-body region includes a portion being at least one 0.5 μm wide that has a net p-type doping level above a doping level of the p-epi layer and a net p-type doping profile gradient of at least 5/μm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"LDMOS device with graded body doping","description":"A laterally diffused MOS (LDMOS) device includes a substrate having a p-epi layer thereon. A p-body region is in the p-epi layer. An ndrift (NDRIFT) region is within the p-body region providing a drai","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698246","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698246","citation_suggestion":"Patentable. \"LDMOS device with graded body doping\" (US-9698246). https://patentable.app/patents/US-9698246","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698246","json":"https://patentable.app/api/llm-context/US-9698246","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:43:19.988Z"}