{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698248","patent":{"patent_number":"US-9698248","title":"Power MOS transistor and manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2014-08-04T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"The present invention discloses a power Metal Oxide Semiconductor (MOS) transistor, wherein a second U-shaped trench is formed below a first U-shaped trench, so that a field oxidation stress transition region can be extended, so as to greatly reduce current leakage caused by the field oxidation stress and improve the reliability of the device; and a charge compensation region is provided in a drift region at the bottom of the second U-shaped trench, and a super-junction structure is formed between the charge compensation region and the drift region to improve the breakdown voltage of the power device. According to the present invention, the second U-shaped trench and the charge compensation region are formed by a self-aligning process, so that the technical process is simple, reliable and easy to control, and can reduce the manufacturing cost of the power MOS transistor and improve its yield."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power MOS transistor and manufacturing method therefor","description":"The present invention discloses a power Metal Oxide Semiconductor (MOS) transistor, wherein a second U-shaped trench is formed below a first U-shaped trench, so that a field oxidation stress transitio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698248","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698248","citation_suggestion":"Patentable. \"Power MOS transistor and manufacturing method therefor\" (US-9698248). https://patentable.app/patents/US-9698248","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698248","json":"https://patentable.app/api/llm-context/US-9698248","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:46.836Z"}