{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704709","patent":{"patent_number":"US-9704709","title":"Method for causing tensile strain in a semiconductor film","assignee":null,"inventors":[],"filing_date":"2016-09-09T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A Method for producing a layer of strained semiconductor material, the method comprising steps for: a) formation on a substrate of a stack comprising a first semiconductor layer based on a first semiconductor material coated with a second semiconductor layer based on a second semiconductor material having a different lattice parameter to that of the first semiconductor material, b) producing on the second semiconductor layer a mask having a symmetry, c) rendering amorphous the first semiconductor layer along with zones of the second semiconductor layer without rendering amorphous one or a plurality of regions of the second semiconductor layer protected by the mask and arranged respectively opposite the masking block(s), d) performing recrystallization of the regions rendered amorphous and the first semiconductor layer resulting in this first semiconductor layer being strained (FIG. 1A)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for causing tensile strain in a semiconductor film","description":"A Method for producing a layer of strained semiconductor material, the method comprising steps for: a) formation on a substrate of a stack comprising a first semiconductor layer based on a first semic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704709","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704709","citation_suggestion":"Patentable. \"Method for causing tensile strain in a semiconductor film\" (US-9704709). https://patentable.app/patents/US-9704709","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704709","json":"https://patentable.app/api/llm-context/US-9704709","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:54.177Z"}