{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704715","patent":{"patent_number":"US-9704715","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2013-10-29T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method for manufacturing a semiconductor device is provided. The method may include: forming a first material layer and a second material layer on a substrate; forming an auxiliary layer on the second material layer; forming, in the auxiliary layer, openings corresponding to gate structures to be formed; forming a third material layer to cover the auxiliary layer; forming, on the third material layer, a mask layer corresponding to at least one of the gate structures; patterning the third material layer to remove its lateral extending portions, with the mask layer present thereon; removing the auxiliary layer; patterning the second material layer with the patterned third material layer a mask, such that the gate structures, for which different gate lengths can be defined, are formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"A method for manufacturing a semiconductor device is provided. The method may include: forming a first material layer and a second material layer on a substrate; forming an auxiliary layer on the seco","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704715","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704715","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-9704715). https://patentable.app/patents/US-9704715","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704715","json":"https://patentable.app/api/llm-context/US-9704715","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:46:28.469Z"}