{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704746","patent":{"patent_number":"US-9704746","title":"Advanced self-aligned patterning process with sit spacer as a final dielectric etch hardmask","assignee":null,"inventors":[],"filing_date":"2016-08-12T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a metallization layer by ASAP is provided. Embodiments include forming an ULK layer; forming a SAC SiN layer over the ULK layer; forming mandrels directly on the SAC SiN layer; cutting the mandrels; selectively etching the SAC SiN layer across the cut mandrels, forming first trenches; filling the first trenches with a metal oxide; forming a conformal metal oxide layer over the cut mandrels, the metal oxide, and the SAC SiN layer; removing horizontal portions of the conformal metal oxide layer over the cut mandrels and the SAC SiN layer; removing the cut mandrels; removing exposed portions of the SAC SiN layer and etching the underlying ULK layer, forming second trenches; and stripping a remainder of the metal oxide, conformal metal oxide layer, and SAC SiN layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Advanced self-aligned patterning process with sit spacer as a final dielectric etch hardmask","description":"A method of forming a metallization layer by ASAP is provided. Embodiments include forming an ULK layer; forming a SAC SiN layer over the ULK layer; forming mandrels directly on the SAC SiN layer; cut","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704746","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704746","citation_suggestion":"Patentable. \"Advanced self-aligned patterning process with sit spacer as a final dielectric etch hardmask\" (US-9704746). https://patentable.app/patents/US-9704746","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704746","json":"https://patentable.app/api/llm-context/US-9704746","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:14:31.492Z"}