{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704755","patent":{"patent_number":"US-9704755","title":"Multi-gate device structure including a fin-embedded isolation region and methods thereof","assignee":null,"inventors":[],"filing_date":"2016-07-18T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A structure and method for implementation of high voltage devices within multi-gate device structures includes a substrate having a fin extending therefrom and a fin-embedded isolation region. In some examples, the fin-embedded isolation region includes an STI region. In some embodiments, the fin-embedded isolation separates a first portion of the fin from a second portion of the fin. Also, in some examples, the first portion of the fin includes a channel region. In various embodiments, a source region is formed in the first portion of the fin, a drain region is formed in the second portion of the fin, and an active gate is formed over the channel region. In some examples, the active gate is disposed adjacent to the source region. In addition, a plurality of dummy gates may be formed over the fin, to provide a uniform growth environment and growth profile for source and drain region formation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-gate device structure including a fin-embedded isolation region and methods thereof","description":"A structure and method for implementation of high voltage devices within multi-gate device structures includes a substrate having a fin extending therefrom and a fin-embedded isolation region. In some","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704755","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704755","citation_suggestion":"Patentable. \"Multi-gate device structure including a fin-embedded isolation region and methods thereof\" (US-9704755). https://patentable.app/patents/US-9704755","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704755","json":"https://patentable.app/api/llm-context/US-9704755","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:21:20.666Z"}