{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704798","patent":{"patent_number":"US-9704798","title":"Using materials with different etch rates to fill trenches in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2013-12-20T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"An embodiment includes a metal interconnect structure, comprising: a dielectric layer on a substrate; an opening in the dielectric layer, wherein the opening has opening sidewalls and exposes a conductive region of at least one of the substrate and an additional interconnect structure; a first atomic layer deposition (ALD) layer on the conductive region and the opening sidewalls; a second ALD layer on a portion of the first ALD layer, and a third ALD layer within the opening and on the first ALD layer. Other embodiments are described herein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Using materials with different etch rates to fill trenches in semiconductor devices","description":"An embodiment includes a metal interconnect structure, comprising: a dielectric layer on a substrate; an opening in the dielectric layer, wherein the opening has opening sidewalls and exposes a conduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704798","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704798","citation_suggestion":"Patentable. \"Using materials with different etch rates to fill trenches in semiconductor devices\" (US-9704798). https://patentable.app/patents/US-9704798","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704798","json":"https://patentable.app/api/llm-context/US-9704798","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:55:19.179Z"}