{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704830","patent":{"patent_number":"US-9704830","title":"Semiconductor structure and method of making","assignee":null,"inventors":[],"filing_date":"2016-01-13T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor structure in the form of a die comprises a silicon-containing core having a first surface, an opposite second surface and a peripheral edge surface. A circuit structure on the first surface is circumscribed by a peripheral crackstop structure which stops short of the second surface, thereby leaving an accessible portion of the peripheral edge surface free of the crackstop structure. One or more angular or orthogonal edge connector through-silicon conductive vias (“edge connector TSVs”) connect the circuit structure to the accessible portion of the peripheral edge surface without penetrating the crackstop structure. A method of making the structure includes forming the edge connector TSVs in the silicon wafer from which the semiconductor structures, i.e., dies, are cut."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method of making","description":"A semiconductor structure in the form of a die comprises a silicon-containing core having a first surface, an opposite second surface and a peripheral edge surface. A circuit structure on the first su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704830","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704830","citation_suggestion":"Patentable. \"Semiconductor structure and method of making\" (US-9704830). https://patentable.app/patents/US-9704830","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704830","json":"https://patentable.app/api/llm-context/US-9704830","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:40:03.218Z"}