{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704850","patent":{"patent_number":"US-9704850","title":"Electrostatic discharge protection device comprising a silicon controlled rectifier","assignee":null,"inventors":[],"filing_date":"2016-06-09T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"An electrostatic discharge protection device including a silicon controlled rectifier. In one example, the silicon controlled rectifier includes a first n-type region located in a semiconductor substrate. The silicon controlled rectifier also includes a first p-type region located adjacent the first n-type region in the semiconductor substrate. The silicon controlled rectifier further includes an n-type contact region and a p-type contact region located in the first n-type region. The silicon controlled rectifier also includes an n-type contact region and a p-type contact region located in the first p-type region. The silicon controlled rectifier further includes a blocking region having a higher resistivity than the first p-type region. The blocking region is located between the n-type contact region and the p-type contact region in the first p-type region for reducing a trigger voltage of the silicon controlled rectifier."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electrostatic discharge protection device comprising a silicon controlled rectifier","description":"An electrostatic discharge protection device including a silicon controlled rectifier. In one example, the silicon controlled rectifier includes a first n-type region located in a semiconductor substr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704850","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704850","citation_suggestion":"Patentable. \"Electrostatic discharge protection device comprising a silicon controlled rectifier\" (US-9704850). https://patentable.app/patents/US-9704850","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704850","json":"https://patentable.app/api/llm-context/US-9704850","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:18:42.821Z"}