{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704952","patent":{"patent_number":"US-9704952","title":"Semiconductor device and method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-03-09T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"An object is to provide a technique that suppresses decrease in the breakdown voltage of a protective element. There is provided a semiconductor device that comprises a vertical MOS transistor and a protective element. A first nitride semiconductor layer has a convex that is protruded toward a second nitride semiconductor layer. The convex has a top face placed at a position to overlap with at least part of an ohmic electrode of a second conductive type when viewed from a stacking direction of a stacked body. The thickness of the second nitride semiconductor layer in a portion which a bottom face of a trench is in contact with is greater than the thickness of the second nitride semiconductor layer in a portion which the top face of the convex is in contact with."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing semiconductor device","description":"An object is to provide a technique that suppresses decrease in the breakdown voltage of a protective element. There is provided a semiconductor device that comprises a vertical MOS transistor and a p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704952","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704952","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing semiconductor device\" (US-9704952). https://patentable.app/patents/US-9704952","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704952","json":"https://patentable.app/api/llm-context/US-9704952","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:36:07.150Z"}