{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704957","patent":{"patent_number":"US-9704957","title":"Silicon carbide semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-07-09T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"The silicon carbide semiconductor layer includes a first impurity region, a second impurity region, and a third impurity region. Turning to a first position at which an impurity concentration 1/10 as high as a highest impurity concentration is exhibited in a concentration profile of an impurity having the first conductivity type in a direction perpendicular to the main surface in the third impurity region and a second position at which an impurity concentration 1/10 as high as a highest impurity concentration is exhibited in a concentration profile of an impurity having the second conductivity type in the direction perpendicular to the main surface in the second impurity region, a first depth from the main surface to the first position is shallower than a second depth from the main surface to the second position. The electrode is electrically connected to the second impurity region and the third impurity region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing the same","description":"The silicon carbide semiconductor layer includes a first impurity region, a second impurity region, and a third impurity region. Turning to a first position at which an impurity concentration 1/10 as ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704957","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704957","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing the same\" (US-9704957). https://patentable.app/patents/US-9704957","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704957","json":"https://patentable.app/api/llm-context/US-9704957","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:53.061Z"}