{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704972","patent":{"patent_number":"US-9704972","title":"Semiconductor structures and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-09-25T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method is provided for fabricating transistors. The method includes providing a semiconductor substrate. The substrate has a gate film and a mask film formed on a top surface. The mask film contains implanted carbon ions. The method further includes forming a mask layer by etching the mask film and then forming a gate layer by etching through the gate film using the mask layer as a mask until the substrate is exposed. The method also includes forming a first sidewall containing implanted carbon ions on the side surface of the gate layer and the mask layer; forming a stress layer in the substrate on both sides of the gate layer and the first sidewall; and forming a source region on one side of the gate layer and the first sidewall and a drain region on the other side of the gate layer and the first side wall."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structures and fabrication method thereof","description":"A method is provided for fabricating transistors. The method includes providing a semiconductor substrate. The substrate has a gate film and a mask film formed on a top surface. The mask film contains","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704972","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704972","citation_suggestion":"Patentable. \"Semiconductor structures and fabrication method thereof\" (US-9704972). https://patentable.app/patents/US-9704972","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704972","json":"https://patentable.app/api/llm-context/US-9704972","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:35:08.182Z"}