{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704980","patent":{"patent_number":"US-9704980","title":"Insulated gate bipolar transistor and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2014-10-06T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":8,"abstract":"An insulated gate bipolar transistor includes: a drift layer having a semiconductor substrate with N-type conductivity; a collector layer having P-type conductivity at a surface layer of the semiconductor substrate at a back surface side; and a field stop layer between the drift layer and the collector layer that has a higher impurity concentration than the drift layer. In a thickness direction of the semiconductor substrate, a lifetime control layer is arranged with a predetermined half value width by helium ion implantation; and the field stop layer is arranged with a predetermined half value width by hydrogen ion implantation. Further, a half value width region of the lifetime control layer and a half value width region of the field stop layer overlap each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Insulated gate bipolar transistor and method for manufacturing same","description":"An insulated gate bipolar transistor includes: a drift layer having a semiconductor substrate with N-type conductivity; a collector layer having P-type conductivity at a surface layer of the semicondu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704980","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704980","citation_suggestion":"Patentable. \"Insulated gate bipolar transistor and method for manufacturing same\" (US-9704980). https://patentable.app/patents/US-9704980","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704980","json":"https://patentable.app/api/llm-context/US-9704980","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:35:48.890Z"}