{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704985","patent":{"patent_number":"US-9704985","title":"Semiconductor device including a channel region and method for manufacturing the semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-05-30T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":23,"abstract":"A semiconductor device of the present invention includes a semiconductor layer, a source region and a drain region formed in a surface of the semiconductor layer, both having a first conductivity type, a plurality of gate trenches each formed so as to extend across the source region and the drain region, in a plan view observed in a direction of a normal to the surface of the semiconductor layer, a channel region of a first conductivity type made of the semiconductor layer sandwiched by the gate trenches adjacent to each other, having a channel length along a direction extending from the drain region to the source region, and a gate electrode buried in the gate trench via a gate insulating film, and the channel region has a thickness in the plan view not more than two times a width of a depletion layer to be generated due to a built-in potential between the channel region and the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a channel region and method for manufacturing the semiconductor device","description":"A semiconductor device of the present invention includes a semiconductor layer, a source region and a drain region formed in a surface of the semiconductor layer, both having a first conductivity type","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704985","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704985","citation_suggestion":"Patentable. \"Semiconductor device including a channel region and method for manufacturing the semiconductor device\" (US-9704985). https://patentable.app/patents/US-9704985","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704985","json":"https://patentable.app/api/llm-context/US-9704985","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:35:02.809Z"}