{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9704987","patent":{"patent_number":"US-9704987","title":"Lateral double diffused metal oxide semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-08-01T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"A lateral double diffused metal oxide semiconductor device, includes: a P-type substrate, an epitaxial layer, a P-type high voltage well, a P-type body region, an N-type well, an isolation oxide region, a drift oxide region, a gate, an N-type contact region, a P-type contact region, a top source, a bottom source, and an N-type drain. The P-type body region is between and connects the P-type high voltage well and the surface of the epitaxial layer. The P-type body region includes a peak concentration region, which is beneath and in direct contact the surface of the epitaxial layer, wherein the peak concentration region has a highest P-type impurity concentration in the P-type body region. The P-type impurity concentration of the P-type body region is higher than a predetermined threshold to suppress a parasitic bipolar transistor such that it does not turn ON."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral double diffused metal oxide semiconductor device and manufacturing method thereof","description":"A lateral double diffused metal oxide semiconductor device, includes: a P-type substrate, an epitaxial layer, a P-type high voltage well, a P-type body region, an N-type well, an isolation oxide regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9704987","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9704987","citation_suggestion":"Patentable. \"Lateral double diffused metal oxide semiconductor device and manufacturing method thereof\" (US-9704987). https://patentable.app/patents/US-9704987","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9704987","json":"https://patentable.app/api/llm-context/US-9704987","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:47:04.985Z"}