{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9705031","patent":{"patent_number":"US-9705031","title":"Semiconductor material","assignee":null,"inventors":[],"filing_date":"2013-10-02T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"A semiconductor wafer comprising a substrate; a first AlGaN layer on the substrate; a second AlGaN layer on the first AlGaN layer; a GaN layer on the second AlGaN layer; and a plurality of crystalline GaN islands between the first and second AlGaN layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor material","description":"A semiconductor wafer comprising a substrate; a first AlGaN layer on the substrate; a second AlGaN layer on the first AlGaN layer; a GaN layer on the second AlGaN layer; and a plurality of crystalline","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9705031","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9705031","citation_suggestion":"Patentable. \"Semiconductor material\" (US-9705031). https://patentable.app/patents/US-9705031","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9705031","json":"https://patentable.app/api/llm-context/US-9705031","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:28:15.597Z"}