{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9705077","patent":{"patent_number":"US-9705077","title":"Spin torque MRAM fabrication using negative tone lithography and ion beam etching","assignee":null,"inventors":[],"filing_date":"2015-08-31T00:00:00.000Z","publication_date":"2017-07-11T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":16,"abstract":"A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin torque MRAM fabrication using negative tone lithography and ion beam etching","description":"A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist mate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9705077","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9705077","citation_suggestion":"Patentable. \"Spin torque MRAM fabrication using negative tone lithography and ion beam etching\" (US-9705077). https://patentable.app/patents/US-9705077","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9705077","json":"https://patentable.app/api/llm-context/US-9705077","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:51.425Z"}