{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711230","patent":{"patent_number":"US-9711230","title":"Method for writing into and reading a multi-levels EEPROM and corresponding memory device","assignee":null,"inventors":[],"filing_date":"2014-10-10T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":37,"abstract":"During a phase of programming the cell, a first voltage is applied to the source region and a second voltage, higher than the first voltage, is applied to the drain region until the cell is put into conduction. The numerical value of the item of data to be written is controlled by the level of the control voltage applied to the control gate and the item of data is de facto written with the numerical value during the putting into conduction of the cell. The programming is then stopped."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for writing into and reading a multi-levels EEPROM and corresponding memory device","description":"During a phase of programming the cell, a first voltage is applied to the source region and a second voltage, higher than the first voltage, is applied to the drain region until the cell is put into c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711230","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711230","citation_suggestion":"Patentable. \"Method for writing into and reading a multi-levels EEPROM and corresponding memory device\" (US-9711230). https://patentable.app/patents/US-9711230","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711230","json":"https://patentable.app/api/llm-context/US-9711230","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:17:29.283Z"}