{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711353","patent":{"patent_number":"US-9711353","title":"Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas","assignee":null,"inventors":[],"filing_date":"2016-01-22T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"An aspect of the present disclosure resides in a method for manufacturing a compound semiconductor epitaxial substrate including a substrate and a compound semiconductor epitaxial layer disposed on the substrate, the method including providing the substrate, heating a carrier gas, preparing a mixed gas by mixing the heated carrier gas with at least a portion of a source gas that is a source for the compound semiconductor epitaxial layer, the source gas having a lower temperature than the heated carrier gas, and forming the compound semiconductor epitaxial layer on the substrate by supplying the mixed gas onto the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas","description":"An aspect of the present disclosure resides in a method for manufacturing a compound semiconductor epitaxial substrate including a substrate and a compound semiconductor epitaxial layer disposed on th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711353","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711353","citation_suggestion":"Patentable. \"Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas\" (US-9711353). https://patentable.app/patents/US-9711353","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711353","json":"https://patentable.app/api/llm-context/US-9711353","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:47:15.791Z"}