{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711357","patent":{"patent_number":"US-9711357","title":"Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure","assignee":null,"inventors":[],"filing_date":"2016-03-21T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor device is manufactured in a semiconductor body by forming an initial mask on a process surface of a semiconductor layer, openings in the mask exposing a part of the semiconductor layer in alignment structure and super-junction structure areas. A recess structure is formed in the semiconductor layer at portions of the process surface that are exposed by the openings, the recess structure in the alignment structure area constituting an initial alignment structure. Dopants are introduced into the semiconductor layer through portions of the process surface that are exposed by the openings of the initial mask. The dopants introduced in the super-junction area constitute part of a super-junction structure. A thickness of the semiconductor layer is increased by growing an epitaxial layer. The initial alignment structure is imaged into the process surface. Dopants are introduced into the semiconductor layer by using a mask aligned to the initial alignment structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure","description":"A semiconductor device is manufactured in a semiconductor body by forming an initial mask on a process surface of a semiconductor layer, openings in the mask exposing a part of the semiconductor layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711357","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711357","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure\" (US-9711357). https://patentable.app/patents/US-9711357","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711357","json":"https://patentable.app/api/llm-context/US-9711357","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:00.306Z"}