{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711362","patent":{"patent_number":"US-9711362","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-02-19T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":25,"abstract":"A semiconductor device of an embodiment includes a first layer, a second layer provided on the first layer, the second layer forming a two-dimensional electron gas in the first layer, a source electrode provided on the second layer, a drain electrode provided on the second layer, a gate electrode provided between the source electrode and the drain electrode on the second layer, and a first insulating layer provided between the gate electrode and the drain electrode on the second layer, the first insulating layer being a first oxide of at least one first element selected from the group consisting of Hf, Zr, Ti, Al, La, Y, and Sc, the first insulating layer containing 5×1019 cm−3 or more of at least one second element selected from the group consisting of F, H, D, V, Nb, and Ta."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"A semiconductor device of an embodiment includes a first layer, a second layer provided on the first layer, the second layer forming a two-dimensional electron gas in the first layer, a source electro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711362","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711362","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9711362). https://patentable.app/patents/US-9711362","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711362","json":"https://patentable.app/api/llm-context/US-9711362","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:18:55.751Z"}