{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711447","patent":{"patent_number":"US-9711447","title":"Self-aligned lithographic patterning with variable spacings","assignee":null,"inventors":[],"filing_date":"2016-10-11T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods of lithographic patterning and structures formed by lithographic patterning. A hardmask layer is formed on a dielectric layer, a feature is formed on the hardmask layer, and a mandrel is formed that extends in a first direction across the first feature. The mandrel and the hardmask layer beneath the mandrel are removed to pattern the hardmask layer with the feature masking a section of the hardmask layer. After the hardmask layer is patterned, the dielectric layer is etched to form a first trench and a second trench that are separated by a section of the dielectric layer masked by the section of the hardmask layer. The first trench and the second trench are filled with a conductor layer to respectively form a first wire and a second wire that is separated from the first wire by the section of the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned lithographic patterning with variable spacings","description":"Methods of lithographic patterning and structures formed by lithographic patterning. A hardmask layer is formed on a dielectric layer, a feature is formed on the hardmask layer, and a mandrel is forme","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711447","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711447","citation_suggestion":"Patentable. \"Self-aligned lithographic patterning with variable spacings\" (US-9711447). https://patentable.app/patents/US-9711447","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711447","json":"https://patentable.app/api/llm-context/US-9711447","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:16:05.501Z"}