{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711507","patent":{"patent_number":"US-9711507","title":"Separate N and P fin etching for reduced CMOS device leakage","assignee":null,"inventors":[],"filing_date":"2016-09-30T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method for forming a semiconductor device includes blocking a first region of a wafer and forming a plurality of fins in a second region of the wafer. A protective conformal mask layer is deposited over the plurality of fins in the second region, the second region is blocked, and a plurality of fins are formed in the first region of the wafer using a variety of wet and/or dry etching procedures. The protective conformal mask layer protects the plurality of fins in the second region from the variety of wet and/or dry etching procedures that are used to form the plurality of fins in the first region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Separate N and P fin etching for reduced CMOS device leakage","description":"A method for forming a semiconductor device includes blocking a first region of a wafer and forming a plurality of fins in a second region of the wafer. A protective conformal mask layer is deposited ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711507","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711507","citation_suggestion":"Patentable. \"Separate N and P fin etching for reduced CMOS device leakage\" (US-9711507). https://patentable.app/patents/US-9711507","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711507","json":"https://patentable.app/api/llm-context/US-9711507","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:27:12.359Z"}