{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711515","patent":{"patent_number":"US-9711515","title":"Method of manufacturing semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2016-08-25T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method of manufacturing a semiconductor memory device according to an embodiment comprises: alternately stacking first inter-layer insulating layers and first layers above a substrate; forming a first opening penetrating the layers stacked above the substrate; and forming a gate insulating layer and a semiconductor layer in the first opening. In addition, the method comprises: forming a second opening penetrating the layers stacked above the substrate; and forming a second inter-layer insulating layer on an inner wall of the second opening. Moreover, the method comprises: forming a first silicide layer and a barrier metal layer on the bottom surface of the second opening; and forming a silicon layer in the second opening such that a crevice is formed in an upper surface of the silicon layer along the second opening. Furthermore, the method comprises: removing part of the silicon layer; and siliciding the silicon layer via the crevice."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor memory device","description":"A method of manufacturing a semiconductor memory device according to an embodiment comprises: alternately stacking first inter-layer insulating layers and first layers above a substrate; forming a fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711515","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711515","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor memory device\" (US-9711515). https://patentable.app/patents/US-9711515","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711515","json":"https://patentable.app/api/llm-context/US-9711515","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:37:42.160Z"}