{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711522","patent":{"patent_number":"US-9711522","title":"Memory hole structure in three dimensional memory","assignee":null,"inventors":[],"filing_date":"2014-10-03T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":13,"abstract":"In a three dimensional nonvolatile memory, memory holes extend vertically through two or more physical levels in which memory cells are formed. Memory hole structures are formed in memory holes to include vertical channels. Vertical trenches are subsequently formed to divide memory hole structures into two or more vertical NAND strings."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory hole structure in three dimensional memory","description":"In a three dimensional nonvolatile memory, memory holes extend vertically through two or more physical levels in which memory cells are formed. Memory hole structures are formed in memory holes to inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711522","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711522","citation_suggestion":"Patentable. \"Memory hole structure in three dimensional memory\" (US-9711522). https://patentable.app/patents/US-9711522","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711522","json":"https://patentable.app/api/llm-context/US-9711522","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:39:05.929Z"}