{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711532","patent":{"patent_number":"US-9711532","title":"Three dimensional NAND memory having improved connection between source line and in-hole channel material as well as reduced damage to in-hole layers","assignee":null,"inventors":[],"filing_date":"2016-10-13T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A fabrication process is provided for a 3D stacked non-volatile memory device which provides a source contact to a bottom of a memory hole in a stack without exposing a programmable material lining of an interior sidewall of the memory hole and without exposing a channel forming region also lining an interior of the memory hole to an energetic and potentially damaging etch environment. The stack includes alternating control gate layers and dielectric layers on a substrate, and the memory hole is etched through the stack before lining an interior sidewall thereof with the programmable material and then with the channel forming material. The process avoids a need to energetically etch down through the memory hole to open up a source contact hole near the bottom of the channel forming material by instead etching upwardly from beneath the memory hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three dimensional NAND memory having improved connection between source line and in-hole channel material as well as reduced damage to in-hole layers","description":"A fabrication process is provided for a 3D stacked non-volatile memory device which provides a source contact to a bottom of a memory hole in a stack without exposing a programmable material lining of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711532","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711532","citation_suggestion":"Patentable. \"Three dimensional NAND memory having improved connection between source line and in-hole channel material as well as reduced damage to in-hole layers\" (US-9711532). https://patentable.app/patents/US-9711532","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711532","json":"https://patentable.app/api/llm-context/US-9711532","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:17:30.183Z"}