{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711533","patent":{"patent_number":"US-9711533","title":"FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof","assignee":null,"inventors":[],"filing_date":"2015-10-16T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a first FinFET device and a second FinFET device. The first FinFET device includes a first gate, a first source, and a first drain. The first FinFET device has a first source/drain proximity. The second FinFET device includes a second gate, a second source, and a second drain. The second FinFET device has a second source/drain proximity that is smaller than the first source/drain proximity. In some embodiments, \\the first FinFET device is an Input/Output (I/O) device, and the second FinFET device is a non-I/O device such as a core device. In some embodiments, the greater source/drain proximity of the first FinFET device is due to an extra spacer of the first FinFET device that does not exist for the second FinFET device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof","description":"A semiconductor device includes a first FinFET device and a second FinFET device. The first FinFET device includes a first gate, a first source, and a first drain. The first FinFET device has a first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711533","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711533","citation_suggestion":"Patentable. \"FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof\" (US-9711533). https://patentable.app/patents/US-9711533","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711533","json":"https://patentable.app/api/llm-context/US-9711533","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:36:47.408Z"}