{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711535","patent":{"patent_number":"US-9711535","title":"Method of forming FinFET channel","assignee":null,"inventors":[],"filing_date":"2015-03-13T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for fabricating a semiconductor device having a substantially undoped channel region includes performing an ion implantation into a substrate, depositing a first epitaxial layer over the substrate, and depositing a second epitaxial layer over the first epitaxial layer. In various examples, a plurality of fins is formed extending from the substrate. Each of the plurality of fins includes a portion of the ion implanted substrate, a portion of the first epitaxial layer, and a portion of the second epitaxial layer. In some embodiments, the portion of the second epitaxial layer of each of the plurality of fins includes an undoped channel region. In various embodiments, the portion of the first epitaxial layer of each of the plurality of fins is oxidized."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming FinFET channel","description":"A method for fabricating a semiconductor device having a substantially undoped channel region includes performing an ion implantation into a substrate, depositing a first epitaxial layer over the subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711535","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711535","citation_suggestion":"Patentable. \"Method of forming FinFET channel\" (US-9711535). https://patentable.app/patents/US-9711535","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711535","json":"https://patentable.app/api/llm-context/US-9711535","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:38:35.670Z"}