{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711563","patent":{"patent_number":"US-9711563","title":"Method of manufacturing semiconductor device having an insulating film in trenches of a semiconductor substrate","assignee":null,"inventors":[],"filing_date":"2015-03-12T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"A method of manufacturing a semiconductor device includes forming, over a semiconductor substrate comprising a first region and a second region, a patterned first film in which an upper face of a portion located over the first region is positioned at a lower height from the semiconductor substrate than an upper face of a portion located over the second region, forming, over the first film, a second film which is an insulating film, a portion of the second film penetrating the first film and being located inside a trench of the semiconductor substrate, and polishing the second film to remove a portion of the second film located over the first film. An occupancy of the trench in the first region is lower than an occupancy of the trench in the second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device having an insulating film in trenches of a semiconductor substrate","description":"A method of manufacturing a semiconductor device includes forming, over a semiconductor substrate comprising a first region and a second region, a patterned first film in which an upper face of a port","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711563","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711563","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device having an insulating film in trenches of a semiconductor substrate\" (US-9711563). https://patentable.app/patents/US-9711563","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711563","json":"https://patentable.app/api/llm-context/US-9711563","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:30.593Z"}