{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711605","patent":{"patent_number":"US-9711605","title":"Contact for high-k metal gate device","assignee":null,"inventors":[],"filing_date":"2016-06-13T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit having an improved gate contact and a method of making the circuit are provided. In an exemplary embodiment, the method includes receiving a substrate. The substrate includes a gate stack disposed on the substrate and an interlayer dielectric disposed on the gate stack. The interlayer dielectric is first etched to expose a portion of the gate electrode, and then the exposed portion of the gate electrode is etched to form a cavity. The cavity is shaped such that a portion of the gate electrode overhangs the electrode. A conductive material is deposited within the cavity and in electrical contact with the gate electrode. In some such embodiments, the etching of the gate electrode forms a curvilinear surface of the gate electrode that defines the cavity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact for high-k metal gate device","description":"An integrated circuit having an improved gate contact and a method of making the circuit are provided. In an exemplary embodiment, the method includes receiving a substrate. The substrate includes a g","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711605","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711605","citation_suggestion":"Patentable. \"Contact for high-k metal gate device\" (US-9711605). https://patentable.app/patents/US-9711605","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711605","json":"https://patentable.app/api/llm-context/US-9711605","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:26:40.355Z"}