{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711606","patent":{"patent_number":"US-9711606","title":"Thin film transistor and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-11-21T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"The manufacturing method of the thin film transistor includes the following steps. A gate, a first insulating layer, a second insulating layer, a metal oxide semiconductor layer, a first etching stop layer, a second etching stop layer and a photoresist structure are sequentially formed. The second etching stop layer, the first etching stop layer, and the metal oxide semiconductor layer are patterned using the photoresist structure as a mask to form a pre-second etching stop pattern, a pre-first etching stop pattern, and a metal oxide semiconductor pattern. The pre-second etching stop pattern and the pre-first etching stop pattern are patterned using the remaining thick portion of the photoresist structure as a mask to form a second etching stop pattern and a first etching stop pattern, and a portion of the second insulating layer is removed to form an insulating pattern. A source and a drain are formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin film transistor and manufacturing method thereof","description":"The manufacturing method of the thin film transistor includes the following steps. A gate, a first insulating layer, a second insulating layer, a metal oxide semiconductor layer, a first etching stop ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711606","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711606","citation_suggestion":"Patentable. \"Thin film transistor and manufacturing method thereof\" (US-9711606). https://patentable.app/patents/US-9711606","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711606","json":"https://patentable.app/api/llm-context/US-9711606","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:31:58.219Z"}