{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711611","patent":{"patent_number":"US-9711611","title":"Modified self-aligned contact process and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-03-29T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a transistor and a contact pad over a substrate. The transistor includes a high-k dielectric layer, a work function metal layer, a metal gate, two spacers, a metal compound, an insulator and a doped region. The high-k dielectric layer is over the substrate. The work function metal layer is over the high-k dielectric layer. The metal gate is over the work function metal layer. The two spacers sandwich the work function metal layer and the metal gate. The metal compound is over inner walls of the two spacers and over the top surface of the work function metal layer and the metal gate. The insulator covers the metal compound. The doped region is in the substrate. The contact pad is electrically connected to the metal gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Modified self-aligned contact process and semiconductor device","description":"A semiconductor device includes a transistor and a contact pad over a substrate. The transistor includes a high-k dielectric layer, a work function metal layer, a metal gate, two spacers, a metal comp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711611","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711611","citation_suggestion":"Patentable. \"Modified self-aligned contact process and semiconductor device\" (US-9711611). https://patentable.app/patents/US-9711611","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711611","json":"https://patentable.app/api/llm-context/US-9711611","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:41:08.981Z"}