{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711614","patent":{"patent_number":"US-9711614","title":"Fabrication of III-nitride power device with reduced gate to drain charge","assignee":null,"inventors":[],"filing_date":"2015-07-01T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and either gate conductive bodies that do not overlap the top surface of the field dielectric bodies or power contacts that do not overlap field dielectric bodies or both."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of III-nitride power device with reduced gate to drain charge","description":"A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and either gate conductive bodies that do not overlap the top surface o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711614","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711614","citation_suggestion":"Patentable. \"Fabrication of III-nitride power device with reduced gate to drain charge\" (US-9711614). https://patentable.app/patents/US-9711614","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711614","json":"https://patentable.app/api/llm-context/US-9711614","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:06.124Z"}