{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711625","patent":{"patent_number":"US-9711625","title":"Method for manufacturing thin-film transistor","assignee":null,"inventors":[],"filing_date":"2014-12-09T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":10,"abstract":"A method for manufacturing a thin-film transistor includes: forming a first metal layer of a pattern including a gate on a substrate through pattern formation operations; forming a gate insulation layer on the substrate and the first metal layer and forming an oxide semiconductor layer, of which an orthogonal projection is cast on the gate, on the gate insulation layer within a thin-film transistor area and an etch stop layer on the oxide semiconductor layer, in which two etching operations are applied to the patternized oxide semiconductor layer and etch stop layer; forming a patternized second metal layer on the thin-film transistor area and an exposed portion of the gate insulation layer, forming a patternized insulation protection layer on the substrate and the patternized second metal layer, and forming a patternized pixel electrode on the insulation protection layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing thin-film transistor","description":"A method for manufacturing a thin-film transistor includes: forming a first metal layer of a pattern including a gate on a substrate through pattern formation operations; forming a gate insulation lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711625","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711625","citation_suggestion":"Patentable. \"Method for manufacturing thin-film transistor\" (US-9711625). https://patentable.app/patents/US-9711625","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711625","json":"https://patentable.app/api/llm-context/US-9711625","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:18.274Z"}