{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711634","patent":{"patent_number":"US-9711634","title":"Semiconductor device including a super junction MOSFET","assignee":null,"inventors":[],"filing_date":"2015-10-13T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A super junction MOSFET includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region and a p-type partition region interposed between the pn junctions are alternately arranged and contact each other, a MOS gate structure on the surface of the parallel pn layer, and an n-type buffer layer in contact with an opposite main surface. The impurity concentration of the buffer layer is equal to or less than that of the n-type drift region. At least one of the p-type partition regions in the parallel pn layer is replaced with an n− region with a lower impurity concentration than the n-type drift region. With this structure, it is possible to provide a super junction MOSFET which prevents a sharp rise in hard recovery waveform during a reverse recovery operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a super junction MOSFET","description":"A super junction MOSFET includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region and a p-type partition region interposed between the pn junctions are alt","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711634","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711634","citation_suggestion":"Patentable. \"Semiconductor device including a super junction MOSFET\" (US-9711634). https://patentable.app/patents/US-9711634","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711634","json":"https://patentable.app/api/llm-context/US-9711634","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:42:16.762Z"}