{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711641","patent":{"patent_number":"US-9711641","title":"Semiconductor device with cell trench structures and a contact structure","assignee":null,"inventors":[],"filing_date":"2016-06-21T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"A semiconductor device includes first and second cell trench structures extending from a first surface into a semiconductor body, a first semiconductor mesa separating the cell trench structures. The first cell trench structure includes a first buried electrode and a first insulator layer. A first vertical section of the first insulator layer separates the first buried electrode from the first semiconductor mesa. The first semiconductor mesa includes a source zone of a first conductivity type directly adjoining the first surface. The semiconductor device further includes a capping layer on the first surface and a contact structure having a first section in an opening of the capping layer and a second section in the first semiconductor mesa or between the first semiconductor mesa and the first buried electrode. A lateral net impurity concentration of the source zone parallel to the first surface increases in the direction of the contact structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with cell trench structures and a contact structure","description":"A semiconductor device includes first and second cell trench structures extending from a first surface into a semiconductor body, a first semiconductor mesa separating the cell trench structures. The ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711641","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711641","citation_suggestion":"Patentable. \"Semiconductor device with cell trench structures and a contact structure\" (US-9711641). https://patentable.app/patents/US-9711641","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711641","json":"https://patentable.app/api/llm-context/US-9711641","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:36:13.887Z"}