{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711642","patent":{"patent_number":"US-9711642","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-04-29T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":13,"abstract":"A semiconductor device includes: an n-type first source region and first drain region formed in a surface of a p-type epitaxial layer; an n-type first source drift region and first drain drift region formed so as to individually surround the first source region and the first drain region; and a p-type first diffusion region formed in a first channel region and having a higher concentration than the epitaxial layer, the semiconductor device having p-type first withstand voltage maintaining regions formed between the first diffusion region, and the first source drift region and first drain drift region respectively, the first withstand voltage maintaining regions having a lower concentration than the first diffusion region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device includes: an n-type first source region and first drain region formed in a surface of a p-type epitaxial layer; an n-type first source drift region and first drain drift region ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711642","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711642","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9711642). https://patentable.app/patents/US-9711642","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711642","json":"https://patentable.app/api/llm-context/US-9711642","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:35:00.763Z"}