{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711650","patent":{"patent_number":"US-9711650","title":"Vertical thin film transistor selection devices and methods of fabrication","assignee":null,"inventors":[],"filing_date":"2016-06-23T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","H01L","G11C","G11C"],"num_claims":20,"abstract":"Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating such a memory are described. The vertically-oriented TFT may be used as a vertical bit line selection device to couple a global bit line to a vertical bit line. A select device pillar includes a body and upper and lower source/drain regions. At least one gate is separated horizontally from the select device pillar by a gate dielectric. Beneath each gate, a single gap fill dielectric layer extends vertically from a lower surface of the gate, at least partially separating the gate from the underlying global bit line. Between horizontally adjacent pillars, this same dielectric layer extends from its same lower level beneath the gates vertically to a level of the upper source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical thin film transistor selection devices and methods of fabrication","description":"Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating such a memory are described. The vertically-oriented T","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711650","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711650","citation_suggestion":"Patentable. \"Vertical thin film transistor selection devices and methods of fabrication\" (US-9711650). https://patentable.app/patents/US-9711650","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711650","json":"https://patentable.app/api/llm-context/US-9711650","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:22:30.514Z"}