{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9711715","patent":{"patent_number":"US-9711715","title":"Method of manufacturing a dual mode ferroelectric random access memory (FRAM) having imprinted read-only (RO) data","assignee":null,"inventors":[],"filing_date":"2016-06-22T00:00:00.000Z","publication_date":"2017-07-18T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","H01L","G11C"],"num_claims":9,"abstract":"Read-only (“RO”) data to be permanently imprinted in storage cells of a memory array are written to the memory array. One or more over-stress conditions such as heat, over-voltage, over-current and/or mechanical stress are then applied to the memory array or to individual storage cells within the memory array. The over-stress condition(s) act upon one or more state-determining elements of the storage cells to imprint the RO data. The over-stress condition permanently alters a value of a state-determining property of the state-determining element without incapacitating normal operation of the storage cell. The altered value of the state-determining property biases the cell according to the state of the RO data bit. The bias is detectable in the cell read-out signal. A pre-written ferroelectric random-access memory (“FRAM”) array is baked. Baking traps electric dipoles oriented in a direction corresponding to a state of the pre-written data and forms am RO data imprint."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a dual mode ferroelectric random access memory (FRAM) having imprinted read-only (RO) data","description":"Read-only (“RO”) data to be permanently imprinted in storage cells of a memory array are written to the memory array. One or more over-stress conditions such as heat, over-voltage, over-current and/or","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9711715","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9711715","citation_suggestion":"Patentable. \"Method of manufacturing a dual mode ferroelectric random access memory (FRAM) having imprinted read-only (RO) data\" (US-9711715). https://patentable.app/patents/US-9711715","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9711715","json":"https://patentable.app/api/llm-context/US-9711715","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:18:04.555Z"}