{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9715922","patent":{"patent_number":"US-9715922","title":"Single port SRAM memory cell driven by two word lines in asynchronous manner and memory employing the same","assignee":null,"inventors":[],"filing_date":"2016-09-14T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":14,"abstract":"A memory comprised of a plurality of single port SRAM memory cells, each driven by two word lines in an asynchronous manner has a hold mode, a read mode and a write mode. Each of the single port SRAM memory cells includes a first write switch, a second write switch and a latch. The first write switch is electrically connected to a first word line and is turned on by a first turn-on signal transmitted by the first word line. The second write switch is electrically connected to a second word line and is turned on by a second turn-on signal transmitted by the second word line. When the memory is in the write mode, the second write switch is turned on by the second turn-on signal having a delay with respect to the first turn-on signal, thereby blocking the pseudo read of the unselected memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Single port SRAM memory cell driven by two word lines in asynchronous manner and memory employing the same","description":"A memory comprised of a plurality of single port SRAM memory cells, each driven by two word lines in an asynchronous manner has a hold mode, a read mode and a write mode. Each of the single port SRAM ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9715922","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9715922","citation_suggestion":"Patentable. \"Single port SRAM memory cell driven by two word lines in asynchronous manner and memory employing the same\" (US-9715922). https://patentable.app/patents/US-9715922","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9715922","json":"https://patentable.app/api/llm-context/US-9715922","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:51:59.833Z"}