{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9715933","patent":{"patent_number":"US-9715933","title":"Dual function hybrid memory cell","assignee":null,"inventors":[],"filing_date":"2016-04-22T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A dual function hybrid memory cell is disclosed. In one aspect, the memory cell includes a substrate, a bottom charge-trapping region formed on the substrate, a top charge-trapping region formed on the bottom charge-trapping region, and a gate layer formed on the top charge trapping region. In another aspect, a method for programming a memory cell having a substrate, a bottom charge-trapping layer, a top charge-trapping layer, and a gate layer is disclosed. The method includes biasing a channel region of the substrate, applying a first voltage differential between the gate layer and the channel region, injecting charge into the bottom charge-trapping layer from the channel region based on the first voltage differential. The method also includes applying a second voltage differential between the gate layer and the channel region and injecting charge from the bottom charge-trapping layer into the top charge-trapping layer based on the second voltage differential."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual function hybrid memory cell","description":"A dual function hybrid memory cell is disclosed. In one aspect, the memory cell includes a substrate, a bottom charge-trapping region formed on the substrate, a top charge-trapping region formed on th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9715933","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9715933","citation_suggestion":"Patentable. \"Dual function hybrid memory cell\" (US-9715933). https://patentable.app/patents/US-9715933","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9715933","json":"https://patentable.app/api/llm-context/US-9715933","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:51:04.685Z"}