{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716003","patent":{"patent_number":"US-9716003","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-09-08T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"Provided are an oxide semiconductor layer in which the number of defects is reduced and a highly reliable semiconductor device including the oxide semiconductor. A first oxide semiconductor layer containing a single metal element as a constituent element is formed over a substrate by a thermal chemical vapor deposition method. A second oxide semiconductor layer containing two or more metal elements as constituent elements is formed successively after the first oxide semiconductor layer is formed. The second oxide semiconductor layer is formed by epitaxial growth using the first oxide semiconductor layer as a seed crystal. A channel is formed in the second oxide semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"Provided are an oxide semiconductor layer in which the number of defects is reduced and a highly reliable semiconductor device including the oxide semiconductor. A first oxide semiconductor layer cont","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716003","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716003","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9716003). https://patentable.app/patents/US-9716003","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716003","json":"https://patentable.app/api/llm-context/US-9716003","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:20:48.435Z"}