{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716009","patent":{"patent_number":"US-9716009","title":"Power semiconductor device with electrode having trench structure","assignee":null,"inventors":[],"filing_date":"2015-03-05T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region selectively provided on the first semiconductor region; a third semiconductor region selectively provided on the second semiconductor region; a first electrode provided on the third semiconductor region and connected to the third semiconductor region; a second electrode electrically connected to the first semiconductor region; a third electrode provide via an insulating film on the first semiconductor region, the second semiconductor region, and the third semiconductor region; and a fourth electrode provided on the second electrode side of the third electrode, the fourth electrode being provided via the insulating film on the first semiconductor region. The insulating film has three or more regions between the fourth electrode and the first semiconductor region. Width of each of the regions in a direction crossing a direction from the third electrode toward the second electrode is different."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power semiconductor device with electrode having trench structure","description":"According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region selectively provided on the first semiconductor region; a third semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716009","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716009","citation_suggestion":"Patentable. \"Power semiconductor device with electrode having trench structure\" (US-9716009). https://patentable.app/patents/US-9716009","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716009","json":"https://patentable.app/api/llm-context/US-9716009","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:16.917Z"}