{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716011","patent":{"patent_number":"US-9716011","title":"Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-01-06T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method of manufacturing a semiconductor device, the method, comprising a first etching step of etching a substrate on which a silicon member and a compound member containing nitrogen and silicon are exposed, by using a first etching gas containing XeF2 and H2, and a second etching step of etching the substrate by using a second etching gas containing XeF2, wherein the second etching gas satisfies at least one of (i) a condition that the second etching gas is lower in a partial pressure of H2 than the first etching gas, and (ii) a condition that the second etching gas is smaller in a quantity of flow of H2 than the first etching gas."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device","description":"A method of manufacturing a semiconductor device, the method, comprising a first etching step of etching a substrate on which a silicon member and a compound member containing nitrogen and silicon are","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716011","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716011","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device\" (US-9716011). https://patentable.app/patents/US-9716011","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716011","json":"https://patentable.app/api/llm-context/US-9716011","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:26:27.650Z"}