{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716045","patent":{"patent_number":"US-9716045","title":"Directly forming SiGe fins on oxide","assignee":null,"inventors":[],"filing_date":"2016-08-05T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"Semiconductor mandrel structures are formed extending upward from a remaining portion of a semiconductor substrate. A first oxide isolation structure is formed on exposed surfaces of the remaining portion of the semiconductor substrate and between each semiconductor mandrel structure. A silicon germanium alloy fin is formed on opposing sidewalls of each semiconductor mandrel structure that is present in a pFET device region of the semiconductor substrate and directly on a surface of each first oxide isolation structure. Each semiconductor mandrel structure is removed and a second oxide isolation structure is formed between each first oxide isolation structure and extending beneath a bottommost surface of each first oxide isolation structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Directly forming SiGe fins on oxide","description":"Semiconductor mandrel structures are formed extending upward from a remaining portion of a semiconductor substrate. A first oxide isolation structure is formed on exposed surfaces of the remaining por","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716045","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716045","citation_suggestion":"Patentable. \"Directly forming SiGe fins on oxide\" (US-9716045). https://patentable.app/patents/US-9716045","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716045","json":"https://patentable.app/api/llm-context/US-9716045","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:27:58.219Z"}