{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716072","patent":{"patent_number":"US-9716072","title":"Power semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-05-12T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A power semiconductor element is fixed on a die pad of the lead frame. A metal plate is bonded to a lower surface of the die pad via an insulating film. The inner lead etc. are disposed in a cavity between a lower mold and an upper mold and are encapsulated with an encapsulation resin. The lower mold has a stepped portion provided in a bottom surface of the cavity below the inner lead. A height of an upper surface of the stepped portion is larger than a height of an upper surface of the power semiconductor element disposed in the cavity. When an encapsulation resin is injected into the cavity, a lower surface of the metal plate is in contact with the bottom surface of the cavity, and the encapsulation resin flows downward from above the stepped portion toward the upper surface of the power semiconductor element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power semiconductor device and method of manufacturing the same","description":"A power semiconductor element is fixed on a die pad of the lead frame. A metal plate is bonded to a lower surface of the die pad via an insulating film. The inner lead etc. are disposed in a cavity be","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716072","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716072","citation_suggestion":"Patentable. \"Power semiconductor device and method of manufacturing the same\" (US-9716072). https://patentable.app/patents/US-9716072","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716072","json":"https://patentable.app/api/llm-context/US-9716072","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:17:05.389Z"}