{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716088","patent":{"patent_number":"US-9716088","title":"3D bonded semiconductor structure with an embedded capacitor","assignee":null,"inventors":[],"filing_date":"2016-06-30T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A first semiconductor structure including a first bonding oxide layer having a first metallic structure embedded therein and a second semiconductor structure including a second bonding oxide layer having second metallic structure embedded therein are provided. A high-k dielectric material is formed on a surface of the first metallic structure. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. The nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layers and either a nitridized high-k dielectric material located in at least an upper portion of the high k dielectric material or a nitridized metallic region located in an upper portion of the second metallic structure. The nitrogen within the nitridized metallic region is then selectively removed to restore the upper portion of the second metallic structure to its original composition. Bonding is then performed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D bonded semiconductor structure with an embedded capacitor","description":"A first semiconductor structure including a first bonding oxide layer having a first metallic structure embedded therein and a second semiconductor structure including a second bonding oxide layer hav","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716088","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716088","citation_suggestion":"Patentable. \"3D bonded semiconductor structure with an embedded capacitor\" (US-9716088). https://patentable.app/patents/US-9716088","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716088","json":"https://patentable.app/api/llm-context/US-9716088","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:30:26.948Z"}